기사
Bottom electrode optimization for the applications of ferroelectric memory device = 강유전체 기억소자 응용을 위한 하부전극 최적화 연구
표제/저자사항 Bottom electrode optimization for the applications of ferroelectric memory device = 강유전체 기억소자 응용을 위한 하부전극 최적화 연구 / S.M. Jung, Y.S. Choi, D.G. Lim, Y. Park, J.T. Song, J. Yi
형태사항 p. 599-604; 29 cm
주기사항 수록자료: Journal of the Korean crystal growth and crystal technology. 韓國結晶成長學會. 8권 4호(1998년 11월), p. 599-604 8:4<599 상세보기 ISSN 1225-1429
저자: S.M. Jung, School of Electrical and computer Engineering, Sung Kyun Kwan University
저자: Y.S. Choi, School of Electrical and computer Engineering, Sung Kyun Kwan University
저자: D.G. Lim, School of Electrical and computer Engineering, Sung Kyun Kwan University
저자: Y. Park, School of Electrical and computer Engineering, Sung Kyun Kwan University
저자: J.T. Song, School of Electrical and computer Engineering, Sung Kyun Kwan University
저자: J. Yi, School of Electrical and computer Engineering, Sung Kyun Kwan University
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