00883na  a2200229   4500001001300000005001500013008004100028024002700069035001800096100002200114370004800136372004600184372002000230373004800250374005700298374004800355375001100403377002200414400002600436670013700462670005400599KAC20163252020221007144924161206 b aznnnaabn          fa aaa      7 a000000045945690X2isni  a(KRI)101444391 a손종역,d1972-  c한국(국명)[韓國]0KSH20000101452nlsh  a물리학[物理學]0KSH19980143642nlsh  a응용물리학  a경희대학교 응용물리학과 (교수)  a연구원(연구자)[硏究員]0KSH19980377142nlsh  a교수(대학)[敎授]0KSH19980114932nlsh  a남성  l한국어l영어1 aSon, Jongyeog,d1972-  aNonvolatile Ferroelectric Memory Based on PbTiO3 Gated Single-Layer MoS2 Field-Effect Transistor, (대한금속·재료학회), 2018  a한국연구자정보(KRI)uhttps://www.kri.go.kr