01222na  a2200289   4500001001300000005001500013008004100028024002700069035001800096035002700114100003400141370004800175372005300223372004600276372001700322373005500339373004500394373003500439374005700474375001100531377002200542400002500564400002500589670019400614670005400808670007000862KAC20187486220210910164650180723 b aznnnaabn          fa aaa      7 a00000004680234442isni  a(KRI)11283848  a(KISTI)ADPER82009030131 a이관재,g李寬宰,d1985-  c한국(국명)[韓國]0KSH20000101452nlsh  a재료 공학[材料工學]0KSH19980184182nlsh  a물리학[物理學]0KSH19980143642nlsh  a박막증착  a한국광기술원 (연구원)s20111101t20170701  a한국과학기술원 (POST-DOC)s201708  a삼성디스플레이 (책임)  a연구원(연구자)[硏究員]0KSH19980377142nlsh  a남성  l한국어l영어1 aLee, Gwanjae,d1985-1 aLee, Kwanjae,d1985-  aImprovement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice, (한국물리학회), 2017  a한국연구자정보(KRI)uhttps://www.kri.go.kr  a한국과학기술정보연구원(KISTI)uhttps://www.kisti.re.kr