00879na  a2200217   4500001001300000005001500013008004100028024002700069035001800096035002700114100003400141370004800175372005300223373006400276374005700340375001100397377001400408400002600422670005400448670015900502KAC2020G252120230901104327200904 b aznnnaabn          fa aaa      7 a00000004748837662isni  a(KRI)10113222  a(KISTI)ADPER00000888671 a김영배,g金英培,d1969-  c한국(국명)[韓國]0KSH20000101452nlsh  a재료 공학[材料工學]0KSH19980184182nlsh  a삼성전자 메모리사업부 (수석연구원)s20030301  a연구원(연구자)[硏究員]0KSH19980377142nlsh  a남성  l한국어1 aKim, Youngbae,d1969-  a한국연구자정보(KRI)uhttps://www.kri.go.kr  aProcess development and evaluation of an alternative gate dielectric and electrode material for the next generation semiconductor, (漢陽大學校), 2003