학위논문
Nonvolatile floating gate memory using the Si-based nanoclusters and bandgap-engineered tunneling barrier
표제/저자사항 Nonvolatile floating gate memory using the Si-based nanoclusters and bandgap-engineered tunneling barrier / Eunkyeom Kim
발행사항 Seoul : Univ. of Seoul, 2011
형태사항 viii, 107 leaves : ill., charts ; 26 cm
주기사항 Thesis(Ph.D.) -- Graduate School of the Univ. of Seoul, Dept. of Nano Engineering, 2011.
Includes bibliographies.
In English; summary in Korean.
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