학위논문
Heteroepitaxy of GaAs by Metal-organic chemical vapor doposition on low-temperature (450-650 C) plasma-cleaned Si Substrates
표제/저자사항 Heteroepitaxy of GaAs by Metal-organic chemical vapor doposition on low-temperature (450-650 C) plasma-cleaned Si Substrates / by Euijoon Yoon
발행사항 Cambridge: MIT, 1990
형태사항 174 p.: ill.; 28 cm
주기사항 Thesis(Ph.D.) -- Massachusetts Institute of Technology, 1990
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