학위논문
Simulation of SI, SIO₂, and their interface based on a potential with a many-body term
표제/저자사항 Simulation of SI, SIO₂, and their interface based on a potential with a many-body term / by Chongmu Lee
발행사항 [s.l.]: Stanford Univ., c1983
형태사항 xxi, 252p.; 28 cm
주기사항 Thesis(Ph.D.) -- Stanford Univ., 1983
분류기호 듀이십진분류법-> 620.1
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